- 您现在的位置：买卖IC网 > Sheet目录345 > MT45W1MW16BDGB-708 AT (Micron Technology Inc)IC PSRAM 16MBIT 104MHZ 54VFBGA
16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
Timing Requirements
Timing Requirements
Table 12:
Asynchronous READ Cycle Timing Requirements
70ns
Parameter
1
Symbol
Min
Max
Units
Notes
Address access time
t
AA
70
ns
APA
ADV# access time
Page access time
t
AADV
t
70
20
ns
ns
Address hold from ADV# HIGH
t
AVH
5
ns
BA
Address setup to ADV# HIGH
LB#/UB# access time
t AVS
t
10
70
ns
ns
LB#/UB# disable to DQ High-Z output
LB#/UB# enable to Low-Z output
Maximum CE# pulse width
t BHZ
t BLZ
t CEM
10
8
8
ns
ns
μs
4
3
2
CE# LOW to WAIT valid
t CEW
1
7.5
ns
Chip select access time
CE# LOW to ADV# HIGH
t CO
t CVS
10
70
ns
ns
Chip disable to DQ and WAIT High-Z output
Chip enable to Low-Z output
Output enable to valid output
Output hold from address change
Output disable to DQ High-Z output
Output enable to Low-Z output
Page cycle time
READ cycle time
ADV# pulse width LOW
ADV# pulse width HIGH
t HZ
t LZ
t OE
t OH
t OHZ
t OLZ
t PC
t RC
t VP
t VPH
10
5
3
20
70
10
10
8
20
8
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
4
3
4
3
Notes:
1. All tests are performed with the outputs configured for full drive strength (BCR[5] = 0b).
2. Low-Z to High-Z timings are tested with the circuit shown in Figure 25 on page 32. The
High-Z timings measure a 100mV transition from either V OH or V OL toward V CC Q/2.
3. High-Z to Low-Z timings are tested with the circuit shown in Figure 25 on page 32. The Low-
Z timings measure a 100mV transition away from the High-Z (V CC Q/2) level toward either
V OH or V OL .
4. Page mode enabled only.
PDF: 09005aef81cb58ed/Source: 09005aef81c7a667
16mb_burst_cr1_0_p23z_2.fm - Rev. H 4/08 EN
33
Micron Technology, Inc., reserves the right to change products or specifications without notice.
?2005 Micron Technology, Inc. All rights reserved.
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MT48H32M16LFB4-75B IT:C
IC SDRAM 512MB 54VFBGA
MT48H8M16LFB4-75 IT:K TR
IC SDRAM 128MBIT 133MHZ 54VFBGA
MTC100-JA2-P34
CONTACT INSERT PIN
MX841BE
IC CONVERTER WHITE LED 8-SOIC
MXHV9910BTR
IC LED DRIVER HIGH BRIGHT 8-SOIC
MXN12FB12F
MOTOR BRUSHED DC 12V 2922RPM
MXN13FB08B1
MOTOR BRUSHED DC 8V 4714RPM
N01L63W2AB25I
IC SRAM ASYNC 1MBIT ULP 48-BGA
相关代理商/技术参数
MT45W1MW16BDGB-708 AT TR
功能描述:IC PSRAM 16MBIT 70NS 54VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:4G（256M x 16） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP I 包装:Digi-Reel® 其它名称:557-1461-6
MT45W1MW16BDGB-708 IT
制造商:Micron Technology Inc 功能描述:PSRAM Async 1 16M-Bit 1M x 16 70ns 54-Pin VFBGA Tray
MT45W1MW16BDGB-708 IT TR
制造商:Micron Technology Inc 功能描述:
MT45W1MW16BDGB-708 WT
制造商:Micron Technology Inc 功能描述:PSRAM Async 1 16M-Bit 1M x 16 70ns 54-Pin VFBGA Tray
MT45W1MW16BDGB-708 WT TR
功能描述:IC PSRAM 16MBIT 70NS 54VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:移动 SDRAM 存储容量:256M（8Mx32） 速度:133MHz 接口:并联 电源电压:1.7 V ~ 1.95 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:带卷 (TR) 其它名称:557-1327-2
MT45W1MW16BP23ZWC2
制造商:Micron Technology Inc 功能描述:1MX16 PSRAM DIE-COM 1.8V BURST PSEUDO STATIC 1.8V I/O - Bulk
MT45W1MW16PABA-70 WT
功能描述:IC PSRAM 16MBIT 70NS 48VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M（8Mx32） 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:托盘 其它名称:Q2841869
MT45W1MW16PABA-70 WT TR
功能描述:IC PSRAM 16MBIT 70NS 48VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘
